Defects at the carbon terminated SiC(001) surface

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1259-1263

  Catellani, Alessandra ^a   Galli, Giulia ^b  

^a CNR   (Italy)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

3C SiC; Computer simulation; Scanning tunneling microscopy

Indexed keywords

CARBON; COMPUTER SIMULATION; DEFECTS; MOLECULAR DYNAMICS; SILICON CARBIDE;

STOICHIOMETRIC CARBON;

THIN FILMS;

SILICON CARBIDE;

EID: 0035269361     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00449-0     Document Type: Article

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