Highly stable Si atomic line formation on the β-SiC(100) surface

Physical Review Letters

Volumn 79, Issue 13, 1997, Pages 2498-2501

  Soukiassian, P ^a,b   Semond, F ^a,b   Mayne, A ^b   Dujardin, G ^b  

^a CEA SACLAY   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000471991     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.79.2498     Document Type: Article

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