Temperature-Induced Semiconducting c(4 × 2)⇔ Metallic (2 × 1)Reversible Phase Transition on the β-SiC(100) Surface

Physical Review Letters

Volumn 79, Issue 19, 1997, Pages 3700-3703

  Aristov, V Yu ^a,b   Douillard, L ^a,b   Fauchoux, O ^a,b   Soukiassian, P ^a,b  

^a CEA SACLAY   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINDING ENERGY; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SPECTROSCOPY; SURFACE PROPERTIES; SURFACES;

ANGLE RESOLVED ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; DIMERS; SURFACE METALLIZATION; SURFACE RECONSTRUCTIONS;

PHASE TRANSITIONS;

EID: 0031275897     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.79.3700     Document Type: Article

References (14)

1. C. B. Duke, Chem. Rev. 96, 1237 (1996), and references therein.
2. J. A. Kubby and J. J. Boland, Surf. Sci. Rep. 26, 63 (1996), and references therein.
3. W. Mönch, Semiconductor Surfaces and Interfaces (Springer-Verlag, Berlin, Heidelberg, 1993), and references therein.
4. J. P. LaFemina, Surf. Sci. Rep. 16, 133 (1992), and references therein.
5. R. A. Wolkow, Phys. Rev. Lett. 68, 2636 (1992).
6. L. Gavioli, M. G. Betti, and C. Mariani, Phys. Rev. Lett. 77, 3869 (1996).
7. R. Kaplan and V. M. Bermudez, in Properties of Silicon Carbide, G. Harris, EMIS Datareview Series (INSPEC, London, 1995), Vol. 13, p. 101, and references therein.
8. P. Soukiassian, F. Semond, L. Douillard, A. Mayne, G. Dujardin, L. Pizzagalli, and C. Joachim, Phys. Rev. Lett. 78, 907 (1997).
9. M. L. Shek, Surf. Sci. 349, 317 (1996).
10. P. Käckell, J. Furthmüller, and F. Bechstedt, Appl. Surf. Sci. 104–105, 45 (1996).
11. M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann, Phys. Rev. B 53, 13 121 (1996).
12. A. Catellani, G. Galli, and F. Gygi, Phys. Rev. Lett. 77, 5090 (1996).
13. V. Yu. Aristov and P. Soukiassian, recent angle-resolved photoemission experiments.
14. L. Douillard, B. Delley, P. Soukiassian, and E. Wimmer, recent ab initio DMol calculations.