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Volumn 357-358, Issue , 1996, Pages 436-440
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Space fluctuation of empty states on 3C-SiC(001) surface
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Author keywords
Scanning tunneling microscopy; Scanning tunneling spectroscopies; Silicon carbide; Surface electronic phenomena; Surface structure, morphology, roughness, and topography; Surface thermodynamics
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Indexed keywords
CHARGE TRANSFER;
CLEANING;
ELECTRON ENERGY LEVELS;
ELECTRON TRANSPORT PROPERTIES;
ELECTRONIC PROPERTIES;
MORPHOLOGY;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTOR MATERIALS;
SILICON CARBIDE;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
THERMODYNAMIC PROPERTIES;
INTER DIMER BUCKLING;
SCANNING TUNNELING SPECTROSCOPIES;
SPACE FLUCTUATION OF EMPTY STATES;
SURFACE ELECTRONIC PHENOMENA;
SURFACE THERMODYNAMICS;
TOPOGRAPHY;
SURFACE PHENOMENA;
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EID: 0030164375
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(96)00195-1 Document Type: Article |
Times cited : (21)
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References (15)
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