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Volumn 357-358, Issue , 1996, Pages 436-440

Space fluctuation of empty states on 3C-SiC(001) surface

Author keywords

Scanning tunneling microscopy; Scanning tunneling spectroscopies; Silicon carbide; Surface electronic phenomena; Surface structure, morphology, roughness, and topography; Surface thermodynamics

Indexed keywords

CHARGE TRANSFER; CLEANING; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC PROPERTIES; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SURFACE ROUGHNESS; SURFACE STRUCTURE; THERMODYNAMIC PROPERTIES;

EID: 0030164375     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00195-1     Document Type: Article
Times cited : (21)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.