Perfect cellular disorder in a two-dimensional system: Si cells on the 3C-SiC(001) surface

Surface Science

Volumn 421, Issue 1-2, 1999, Pages

  Hara, S ^a   Kitamura, J ^a   Okushi, H ^a   Misawa, S ^a   Yoshida, S ^a   Kajimura, K ^a   Yeom, H W ^b,c   Uhrberg, R I G ^c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Angle resolved photoemission; Ising models; Scanning tunneling microscopy; Silicon carbide; Surface electronic phenomena; Surface structure, morphology, roughness, and topography; Surface thermodynamics

Indexed keywords

ELECTRON TRANSITIONS; MORPHOLOGY; PHOTOEMISSION; SCANNING ELECTRON MICROSCOPY; SURFACE PHENOMENA; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY; THERMODYNAMICS;

ANGLE RESOLVED PHOTOEMISSION; CELLULAR DISORDER; ISING MODELS; SILICON CELLS; SURFACE STATE DISPERSION;

SILICON CARBIDE;

EID: 0033521777     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00874-7     Document Type: Article

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