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Volumn 349, Issue 3, 1996, Pages 317-332

Soft X-ray studies of a c(4 × 2)* β-SiC(100) surface

Author keywords

Low energy electron diffraction; Semiconducting surfaces; Silicon carbide; Soft X ray photoelectron spectroscopy; Stepped single crystal surfaces; Surface electronic phenomena

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SILICON CARBIDE; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0030128599     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01047-5     Document Type: Article
Times cited : (56)

References (48)
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    • note
    • We used a Pulnix TM-745 CCD interline transfer camera with a Spiricon LBA-100A. An integration time that was 4 to 6 times the frame period of 1/30 s was used. For the LEED pictures in Figs. 2 and 3, 512 × 480 pixels were used. For the intensity results in Figs. 4 and 5, the boxed area in Fig. 2a was imaged with the same pixel resolution, and the average of 2 to 16 frames was taken.
  • 17
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    • note
    • The nature of the oxygenated surface species (showing O 2p) is beyond the scope of our present work. At low coverages, the oxygenated species requires thermal activation to be converted into an oxide leading to a chemically shifted Si 2p component.
  • 24
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    • note
    • Parameters obtained for Fig. 10 curve 1a: peak 1 at -98.947 eV, peak 2 at -99.892 eV, FWHM 0.649 eV, Gaussian width 0.6 eV; peak 3 at -100.354 eV, FWHM 0.615 eV, Gaussian width 0.43 eV; peak ratio 1 : 2=0.25, 1 : 3=0.41, 2 : 3=1.68. Parameters for Fig. 10 curve 3a: peak 1 at -98.980 eV, peak 2 at -99.911 eV, FWHM 0.613 eV, Gaussian width 0.57 eV; peak 3 at -100.361 eV, FWHM 0.590 eV, Gaussian width 0.413 eV; peak ratio 1 : 2=0.30,1 : 3=0.48, 2 : 3=1.63. The energy values are averaged over 13 spectra at 130 eV and 5 spectra at 120 eV, for surfaces with peak 1 : 3 area varying from ∼0.2 to ∼0.5 seen at 130 eV.
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    • For better treatments of background removals, see: S. Tougaard, Surf. Sci. 216 (1989) 343; Jansson et al., Surf. Interface Anal. 23 (1995) 484.
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    • For better treatments of background removals, see: S. Tougaard, Surf. Sci. 216 (1989) 343; Jansson et al., Surf. Interface Anal. 23 (1995) 484.
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    • 3/2 core level energy lead to too low a value for the band gap energy of 2.3 eV. Our subsequent interpretation assumes that any (downward) energy shift is uniform throughout the absorption near-edge region. A qualitatively similar situation exists for Si; see Refs. [18,28].
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    • note
    • Abbreviated descriptions of the Si 2p spectra will be given as the ratio r of the intensity at about -99 eV (S1) to that at about -100.4 eV. r=0.26 for Fig. 15 curve 2, r=0.22 for curve 3, r=0.16 for curve 4. (For comparison, r=0.28 for Fig. 10 curve 3c, r=0.25 for curve 3 and r=0.20 for curve 2 in Fig. 7, r=0.17 for Fig. 7 curve 1). The variation of the S1 peak intensity by a factor of ∼1,6, from Fig. 15 curves 4 to 2, rules against the interpretation that the dominant feature at 1.3 eV is due to S1. The partial yield of a contaminated surface with an attenuated S1 does not show a corresponding attenuation of this 1.3 eV feature.
  • 33
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    • note
    • We have used a constant final-state energy of 75 eV instead of 80 eV as in Ref. [18], to avoid some very weak unidentified photoemission feature below the conduction band edge.
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    • D.J. Chadi, Phys. Rev. Lett. 43 (1979) 43; J. Vac. Sci. Technol. 16 (1979) 1290.
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    • D.J. Chadi, Phys. Rev. Lett. 43 (1979) 43; J. Vac. Sci. Technol. 16 (1979) 1290.
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    • note
    • Various complications are common also in the use of Auger electron spectroscopy, which, moreover, can be problematic when there are lineshape changes, as may be expected for these surfaces.
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    • F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi and J.A. Yarmoff, Phys. Rev. B 38 (1988) 6084. However, the conclusion has not taken into full consideration that a reduction in plasmon losses upon oxidation would also lead to an increase in the elastic Si 2p signal.
    • (1988) Phys. Rev. B , vol.38 , pp. 6084
    • Himpsel, F.J.1    McFeely, F.R.2    Taleb-Ibrahimi, A.3    Yarmoff, J.A.4
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    • note
    • Suggestions based on incident flux might be incorrect because of an unknown or a possibly coverage-structure dependent sticking coefficient.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.