Deep defect centers in silicon carbide monitored with deep level transient spectroscopy

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 1, 1997, Pages 199-225

  Dalibor, T ^a   Pensl, G ^a   Matsunami, H ^b   Kimoto, T ^b   Choyke, W J ^c   Schoner A ^d   Nordell, N ^d  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b KYOTO UNIVERSITY   (Japan)

^c UNIVERSITY OF PITTSBURGH   (United States)

^d ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; COLOR CENTERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION IMPLANTATION; RADIATION DAMAGE; SCANDIUM; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM; VANADIUM;

DEEP DEFECT CENTERS; ELECTRON IRRADIATION;

SILICON CARBIDE;

EID: 0031188515     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0     Document Type: Article

References (52)

1. D. V. LANG J Appl. Phys. 45, 3023 (1974).
2. LANDOLT-BÖRNSTEIN, New Series, Group III, Vol. 22 Part b, Semiconductors, Impurities and Defects in Group IV Elements and III-V Compounds. Ed. O. MADELUNG and M. SCHULZ, Springer-Verlag. Berlin 1989 (p. 68).
3. K. HÖLZLEIN, G. PENSL, M. SCHULZ, and P. STOLZ, Rev. Sci. Instrum. 57, 1373 (1986).
4. T. KIMOTO, A. ITOH H. MATSUNAMI, S. SRIDHARA, L. L. CLEMEN, R. P. DEVATY, W. J. CHOYKE, T. DALIBOR, C. PEPPERMÜLLER. and G. PENSL, Appl. Phys. Lett. 67, 2833 (1995).
5. T. KIMOTO, H. NISHINO, W. S. YOO, and H. MATSUNAMI, J. Appl. Phys. 73, 726 (1993).
6. N. NORDELL, A. SCHÖNER, and S. G. ANDERSSON, J. Electrochem. Soc. 143, 2910 (1996)
7. J. P. DOYLE, M. O. ABOELFOTOH, M. K. LINNARSSON, B. G. SVENSSON, A. SCHÖNER, N. NORDELL, C. HARRIS, J. L. LINDSTRÖM, E. JANZÉN, and C. HEMMINGSSON, MRS Symp. Proc. Ser. 423, 519 (1996).
8. T. DALIBOR, C. PEPPERMÜLLER, G. PENSL, S. SRIDHARA. R. P. DEVATY, W. J. CHOYKE, A. ITOH, T. KIMOTO, and H. MATSUNAMI, Inst. Phys. Conf. Ser. 142, 517 (1996).
9. V. V. MAKAROV. Soviet. Phys. - Solid State 9, 457 (1967).
10. W. J. CHOYKE, Inst. Phys. Conf. Ser. 31, 58 (1977).
11. L. PATRICK and W. J. CHOYKE, Phys. Rev. B 5, 3253 (1972).
12. L. PATRICK, Phys. Rev. B 5, 2198 (1972).
13. T. DALIBOR, G. PENSL, T. KIMOTO, H. MATSUNAMI, S. SRIDHARA, R. P. DEVATY, and W. J. CHOYKE, Proc. 1st Europ. Conf. Silicon Carbide and Related Materials, ECSCRM-96, October 1996, Heraklion (Crete, Greece), accepted for publication in Diamond Relat. Mater.
14. J. L. HARTKE, J. Appl. Phys. 39, 4871 (1968).
15. H. ZHANG, G. PENSL, P. GLASOW, and S. LEIBENZEDER, ECS Extended Abstracts Vol. 89-2, 714 (1989).
16. M. M. ANIKIN, A. N. ANDREEV, A. A. LEBEDEV, S. N. PYATKO, M. G. RASTEGAEVA, N. S. SAVKINA, A. M. STRELCHUK, A. L. SYRKIN, and V. E. CHELNOKOV, Soviet Phys.-Semicond. 25, 198 (1991).
17. M. M. ANIKIN, A. S. ZUBRILOV, A. A. LEBEDEV, A. P. STRELCHUK, and A. E. CHERENKOV, Soviet Phys. - Semicond. 25, 289 (1991).
18. N. T. SON, E. SÖRMAN, W. M. CHEN, O. KORDINA, B. MONEMAR, and E. JANZEN, Appl. Phys. Lett. 65, 2687 (1994).
19. H. ZHANG, G. PENSL, A. DORNEN, and S. LEIBENZEDER, ECS Extended Abstracts Vol. 89-2, 699 (1989).
20. V. S. VAINER and V. A. ILIN, Soviet Phys. - Solid State 23, 2126 (1981).
21. G. PENSL and W. J. CHOYKE, Physica B 185, 264 (1993).
22. V. S. BALLANDOVICH and G. N. VIOLINA, Cryst. Latt. Def. and Amorph. Mat. 13, 189 (1987).
23. P. ZHOU, M. G. SPENCER, G. L. HARRIS, and K. FEKADE, Appl, Phys. Lett. 50, 1384 (1987).
24. K. ZEKENTES, M. KAYIAMBAKI, and G. CONSTANTINIDIS, Appl. Phys. Lett. 66, 3015 (1995).
25. C. WANG, J. BERNHOLC, and R. F. DAVIS, Phys. Rev. B 38, 12752 (1988).
26. V. NAGESH, J. W. FARMER, R. F. DAVIS, and K. S. KONG, Appl. Phys. Lett. 50, 1138 (1987).
27. K. GRAFF and H. PIEPER, in: Semiconductor Silicon 1981, Ed. H. R. HUFF, R. J. KRIEGLER, and Y. TAKEISHI, The Electrochem. Soc., Pennington 1981 (p. 331).
28. K. MAIER, J. SCHNEIDER, W. WILKENING, S. LEIBENZEDER, and R. STEIN, Mat. Sci. Eng. B 11, 27 (1992).
29. K. MAIER, H. D. MÜLLER, and J. SCHNEIDER, Mat. Sci. Forum 83-87, 1183 (1992).
30. J. SCHNEIDER, H. D. MÜLLER, K. MAIER, W. WILKENING, F. FUCHS, A. DORNEN, S. LEI-BENZEDER, and R. STEIN, Appl. Phys. Lett. 56, 1184 (1990).
31. L. PATRICK and W. J. CHOYKE, Phys. Rev. B 10, 5091 (1974).
32. A. DÖRNEN, Y. LATUSHKO, W. SUTTROP, G. PENSL, S. LEIBENZEDER, and R. STEIN, Mat. '] Sci. Forum 83-87, 1213 (1992).
33. TH. STIASNY, R. HELBIG, and R. A. STEIN, in: Amorphous and Crystalline Silicon Carbide IV, Ed. C. Y. YANG, M. M. RAHMAN, and G. L. HARRIS, Springer Proc. Phys. Vol. 71, Springer-Verlag, Berlin 1992 (p. 210).
34. K. M. LEE, LE Si DANG, G. D. WATKINS, and W. J. CHOYKE, Phys. Rev. B 32, 2273 (1985).
35. M. KUNZER, U. KAUFMANN, K. MAIER, and J. SCHNEIDER, Mat. Sci. Eng. B 29, 118 (1995).
36. H. MCD. HOBGOOD, R. C. GLASS, G. AUGUSTINE, R. H. HOPKINS, J. JENNY, M. SKOW-RONSKI, W. C. MITCHEL, and M. ROTH, Appl. Phys. Lett. 66, 1364 (1995).
37. T. KIMOTO, T. NAKAJIMA, H. MATSUNAMI, T. NAKATA, and M. INOUE, Appl. Phys, Lett. 69, 1113 (1996).
38. V. A. ILIN and V. S. BALLANDOVICH, Defect and Diffusion Forum 103-105, 633 (1993).
39. J. GRILLENBERGER, N. ACHTZIGER, T. LICHT, U. REISLÖHNER, and W. WITTHUHN, Verh. DPG (VI) 32, 734 (1997).
40. M. LANG, G. PENSL, M. GEBHARD, and M. UHRMACHER, Verh. DPG (VI) 25, 824 (1990).
41. J. W. PETERSEN and J. NIELSEN, Appl. Phys. Lett. 56, 1122 (1990).
42. M. LANG, G. PENSL, M. GEBHARD, N. ACHTZIGER, and M. UHRMACHER, Appl. Phys. A 53, 95 (1991).
43. J. R. JENNY, J. SKOWRONSKI, W. C. MITCHEL, H. M. HOBGOOD, R. C. GLASS, G. AUGUSTINE, and R. H. HOPKINS, Appl. Phys. Lett. 68, 1963 (1996).
44. N. ACHTZIGER and W. WITTHUHN, Proc. E-MRS 1996 Spring Meeting, to be published.
45. N. ACHTZIGER, J. GRILLENBERGER, F. GÜNTHER, M. RUB, and W. WITTHUHN, Verh. DPG (VI) 32, 703 (1997).
46. T. DALIBOR, G. PENSL, N. NORDELL, and A. SCHÖNER, Verh. DPG (VI) 32, 703 (1997).
47. T. DALIBOR, G. PENSL, N. NORDELL, and A. SCHÖNER, Phys. Rev. B 55, 13618 (1997).
48. V. V. AFANASEV, M. BASSLER, G. PENSL, M. J. SCHULZ, and E. STEIN VON KAMIENSKI, J. Appl. Phys. 79, 3108 (1996).
49. P. KÄCKELL, B. WENZIEN, and F. BECHSTEDT, Phys. Rev. B 50, 10761 (1994).
50. J. M. LANGER and H. HEINRICH, Phys. Rev. Lett. 55, 1414 (1985).
51. A. UDDIN, H. MITSUHASHI, and T. UEMOTO, Jpn. J. Appl. Phys. 33, L908 (1994).
52. V. S. BALLANDOVICH, Soviet Phys. - Semicond. 25, 174 (1991).