Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in low pressure radio frequency-induction heated chemical vapor deposition reactor

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 3, 2000, Pages 891-899

  Kim, Kwang Chul ^a   Nahm, Kee Suk ^a   Hahn, Yoon Bong ^a   Lee, Yeon Sik ^a   Byun, Hun Soo ^b  

^a Chonbuk National University   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; MASS SPECTROMETRY; PYROLYSIS; RATE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS;

TETRAMETHYLSILANE;

SEMICONDUCTING FILMS;

EID: 0034186879     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582272     Document Type: Article

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