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Volumn 74, Issue 15, 1999, Pages 2137-2139

First-principles study of β-AIN thin films on β-SiC(001)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTAL ORIENTATION; FILM GROWTH; SILICON CARBIDE; SURFACE PHENOMENA; THIN FILMS;

EID: 0032621868     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123814     Document Type: Article
Times cited : (10)

References (17)
  • 10
    • 0041948572 scopus 로고    scopus 로고
    • note
    • We did test calculations using seven and nine layers of SiC. Use of five SiC layers ensures an upper limit of 0.04eV/(1×1) for the precision in the calculation of the formation energies.
  • 11
    • 0042950123 scopus 로고    scopus 로고
    • note
    • N2), have been calculated consistently with the technical details of the supercell calculations.
  • 13
    • 0042549655 scopus 로고    scopus 로고
    • note
    • The formation energy of the reconstructed four-layer film is further decreased by 0.08 eV/(1×1) by considering the formation energy of the p(2×1) interface pattern with respect to the more stable c(2×2) pattern.
  • 14
    • 0038533597 scopus 로고    scopus 로고
    • This behavior is comparable to that of nonpolar wurtzite AlN on SiC; R. Di Felice and J. E. Northrup, Phys. Rev. B 56, 9213 (1997).
    • (1997) Phys. Rev. B , vol.56 , pp. 9213
    • Di Felice, R.1    Northrup, J.E.2
  • 15
    • 0012512265 scopus 로고
    • J. E. Northrup, Phys. Rev. B 37, 8513 (1988); Phys. Rev. Lett. 62, 2487 (1989).
    • (1988) Phys. Rev. B , vol.37 , pp. 8513
    • Northrup, J.E.1
  • 16
    • 4243873072 scopus 로고
    • J. E. Northrup, Phys. Rev. B 37, 8513 (1988); Phys. Rev. Lett. 62, 2487 (1989).
    • (1989) Phys. Rev. Lett. , vol.62 , pp. 2487


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.