Group III-nitride based hetero and quantum structures

Progress in Quantum Electronics

Volumn 24, Issue 6, 2000, Pages 239-290

  Monemar, B ^a   Pozina, G ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARRIER CONCENTRATION; ENERGY GAP; EXCITONS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT EMITTING DIODES; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0033657877     PISSN: 00796727     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0079-6727(00)00009-4     Document Type: Review

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