Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2361-2363

  Grandjean, N ^a   Massies, J ^a   Leroux, M ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032608062     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123851     Document Type: Article

References (17)

1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
2. See for review: Group III Nitride Semiconductor Compounds, edited by B. Gil (Clarendon, Oxford, 1998).
3. R. Niebuhr, K. H. Bachem, D. Behr, C. Hoffman, U. Kaufmann, Y. Lu, B. Santic, J. Wagner, M. Arley, J. L. Rouvière, and H. Jürgensen, Mater. Res. Soc. Symp. Proc. 449, 769 (1997).
4. M. Smith, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Botchkarev, and H. Morkoç, Mater. Res. Soc. Symp. Proc. 449, 829 (1997).
5. N. Grandjean and J. Massies, Appl. Phys. Lett. 73, 1260 (1998).
6. J. M. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Mater. Res. Soc. Symp. Proc. 482, 513 (1998).
7. J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435 (1998).
8. M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 58, R13371 (1998).
9. F. Bernardini, V. Firoentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
10. F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998).
11. L. F. Eastman, Proceedings of the Third European GaN Workshop-EGW3, Warsaw, 22-24 June 1998.
12. N. Grandjean, J. Massies, P. Vennéguès, M. Leroux, F. Demangeot, M. Renucci, and J. Frandon, J. Appl. Phys. 83, 1379 (1998).
13. N. Grandjean and J. Massies, Appl. Phys. Lett. 71, 1816 (1997).
14. K. Kim, W. R. L. Lambrecht, B. Segall, and M. van Schilfgaarde, Phys. Rev. B 56, 7363 (1997).
15. N. Grandjean, M. Leroux, and J. Massies (unpublished results).
16. G. Martin, A. Bothckarev, A. Rockett, and H. Morkoç, Appl. Phys. Lett. 68, 2541 (1996).
17. The transition energy of QWs measured by PL are Stokes shifted by 20-25 meV for the well thicknesses larger than 8 MLs because of the localization of excitons due to thickness fluctuations (see Ref. 8). However, the localization energy being constant for the wide wells, it does not affect the evaluation of the electric field, given by the slope of the energy versus the well thickness.