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Volumn 36, Issue 9 A, 1997, Pages 5393-5408
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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
ELECTRIC CONDUCTIVITY OF SOLIDS;
LIGHT EMITTING DIODES;
NITRIDES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR QUANTUM WELLS;
ALUMINUM GALLIUM NITRIDE;
BUFFER LAYER;
COHERENT GROWTH;
GALLIUM INDIUM NITRIDE;
GALLIUM NITRIDE;
P TYPE CONDUCTION;
SEMICONDUCTOR MATERIALS;
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EID: 0031223973
PISSN: None
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.5393 Document Type: Article |
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Times cited : (673)
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References (91)
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