Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids

Superlattices and Microstructures

Volumn 19, Issue 2, 1996, Pages 81-95

  Grundmann, M ^a   Heitz, R ^a   Ledentsov, N ^a,b   Stier, O ^a   Bimberg, D ^a   Ustinov, V M ^b   Kop'ev, P S ^b   Alferov, Zh I ^b   Ruvimov, S S ^b,c,d   Werner, P ^c   Gosele U ^c   Heydenreich, J ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; FINITE DIFFERENCE METHOD; LIGHT ABSORPTION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

EXCITED STATE; GROUND STATE; MULTIPHONON EMISSION; SCHRODINGER EQUATION; STRANSKI KRASTANOW GROWTH; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029758641     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0011     Document Type: Article

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