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Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 35-38

Continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact

(10) Kuramoto, M a Sasaoka, C a Hisanaga, Y a Kimura, A a Yamaguchi, A A a Sunakawa, H a Kuroda, N a Nido, M a Usui, A a Mizuta, M a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; EPITAXIAL GROWTH; MIRRORS; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

FACE-INITIATED EPITAXIAL LATERAL OVERGROWTH (FIELO); INDIUM GALLIUM NITRIDE;

QUANTUM WELL LASERS;

EID: 0033222016 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199911)176:1<35::AID-PSSA35>3.0.CO;2-2 Document Type: Article

Times cited : (4)

References (10)

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