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Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1749-1754

Defect formation and electronic transport at AlGaN/GaN interfaces

(3) Hsu, L a Walukiewicz, W b Haller, E E a,b

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

GaN; Heterostructure; Modulation doping; Two dimensional electron gas

Indexed keywords

CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HYDROSTATIC PRESSURE; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTING GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 12844250224 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.258-263.1749 Document Type: Article

Times cited : (1)

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