Results, potential and challenges of high power GaN-based transistors

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 175-178

  Eastman, L F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POTENTIAL; ELECTRON TRAPS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OHMIC CONTACTS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; SCHOTTKY CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033221284     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<175::AID-PSSA175>3.0.CO;2-I     Document Type: Article

References (6)

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2. J. A. SMART, A. T. SCHREMER, N. G. WEIMANN, O. AMBACHER, L. F. EASTMAN, and J. R. SHEALY, to be published in J. Appl. Phys. (1999).
3. A. SIERAKOWSKI and L. F. EASTMAN, to be published in J. Appl. Phys. (1999).
4. N. G. WEIMANN, L. F. EASTMAN, D. DOPPALAPUDI, H. M. NG, and T. D. MOUSTAKIS, J. Appl. Phys. 83 (7) (1998).
5. B. K. RIDLEY, private communication, to be published.
6. B. E. FOUTZ, S. K. O'LEARY, M. S. SHUR, and L. F. EASTMAN, J. Appl. Phys. 85 (11) (1999).