Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition

Applied Physics Letters

Volumn 73, Issue 25, 1998, Pages 3653-3655

  Someya, T ^a   Arakawa, Y ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001607822     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122852     Document Type: Article

References (11)

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4. K. Iga, Proceedings of the First International Symposium on Blue Lasers and Light Emitting Diodes (Chiba, Japan, 1996), Th-11.
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7. T. Shirasawa, N. Mochida, A. Inoue, T. Honda, T. Sakaguchi, F. Koyama, and K. Iga, J. Cryst. Growth 189/190, 124 (1998).
8. Since the total gas flow was increased from 19.5 to 36 l/min, the surface temperature of substrates must have been decreased. To compensate for this effect, we increased the substrate temperature from 1075 to 1092 °C.
9. 0.66N layers were grown without changing the gas flow rates so that abrupt interfaces should be obtained.
10. M. Born and E. Wolf, Principle of Optics (Pergamon, Berlin, 1974).
11. T. Someya, Y. Arakawa, J. Lee, and T. Kamiya, Proceedings of the Second International Symposium on Blue Lasers and Light Emitting Diodes (Chiba, Japan, 1998), ThP-4.