Materials design of the codoping for the fabrication of low-resistivity p-type ZnSe and GaN by ab-initio electronic structure calculation

Physica Status Solidi (B) Basic Research

Volumn 202, Issue 2, 1997, Pages 763-773

  Katayama Yoshida, H ^a,b   Yamamoto, T ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c ASAHI CHEMICAL INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031513876     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199708)202:2<763::AID-PSSB763>3.0.CO;2-C     Document Type: Article

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