Energy band/lattice mismatch engineering in quaternary AlInGaN/GaN heterostructure

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 227-230

  Khan, M Asif ^a   Yang, J W ^a   Simin, G ^a   Zur Loye, H ^a   Bicknell Tassius, R ^b   Gaska, R ^c   Shur, M S ^c   Tamulaitis, G ^d   Zukauskas, A ^d  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL LATTICES; ELECTRON GAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; TRANSPORT PROPERTIES;

ENERGY GAP DISCONTINUITY; HETEROINTERFACE; LATTICE MISMATCH;

HETEROJUNCTIONS;

EID: 0033221993     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<227::AID-PSSA227>3.0.CO;2-Q     Document Type: Article

References (11)

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