Optical characterisation of GaN and related materials

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 181-184

  Monemar, B ^a   Bergman, J P ^a   Lundstrom T ^a   Harris, C I ^a   Amano, H ^b   Akasaki, I ^b   Detchprohm, T ^c   Hiramatsu, K ^c   Sawaki, N ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; HETEROJUNCTIONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS;

EXCITONIC RECOMBINATION; GALLIUM NITRIDES; SHALLOW ACCEPTORS; SHALLOW DONOR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031079175     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00237-7     Document Type: Article

References (10)

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5. J. P. Bergman, B. Monemar, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu and N. Sawaki (unpublished results).
6. L. M. Smith, D. J. Wolford, R. Venkatasubramanian and S. K. Ghandhi, MRS Symp. Proc. 163, 95 (1990).
7. E. Finkman, M. D. Sturge and R. Bhat, J. Luminescence 35, 235 (1986).
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10. J. P. Bergman, T. Lundström, B. Monemar, H. Amano and I. Akasaki (unpublished results).