Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

Journal of Applied Physics

Volumn 86, Issue 7, 1999, Pages 3714-3720

  Grandjean, N ^a   Damilano, B ^a   Dalmasso, S ^a   Leroux, M ^a   Laugt M ^a   Massies, J ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; POLARIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE; STARK EFFECT; WURTZITE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032614090     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371241     Document Type: Article

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