Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm

Electronics Letters

Volumn 35, Issue 7, 1999, Pages 571-572

  Hohnsdorf F ^a   Koch, J ^a   Leu, S ^a   Stolz, W ^a   Borchert, B ^b   Druminski, M ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0032690362     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990421     Document Type: Article

References (10)

1. KONDOW, M., KITATANI, T., NAKATSUKA, S., LARSON, M.C., NAKAHARA, K., YAZAWA, Y., OKAI, M., and UOMI, K.: 'GaInNAs: A novel material for long-wavelength semiconductor lasers', IEEE J. Sel. Topics Quantum Electron., 1997, 3, pp. 719-730
2. KONDOW, M., NAKATSUKA, S., KITATANI, T., YAZAWA, Y., and OKAI, M.: 'Room temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 5711-5713
3. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M.C., and UOMI, K.: '1.3-μm continuous-wave lasing operation in GaInNAs quantum well lasers', IEEE Photonics Technol. Lett., 1998, 10, pp. 487-488
4. SATO, S., OSAWA, Y., and SAITOH, T.: 'Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic vapor deposition', Jpn. J. Appl. Phys., 1997, 36, pp. 2671-2675
5. SATO, S., and SATOH, S.: 'Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes', J. Cryst. Growth, 1998, 192, pp. 381-385
6. SATO, S., and SATOH, S.: 'Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metalorganic chemical vapor deposition', Electron. Lett., 1998, 34, pp. 1495-1497
7. SATO, S., and SATOH, S.: 'Room temperature continuous wave operation of 1.24μm GaltiNAs lasers grown by metalorganic chemical vapour deposition', IEEE 16th Int. Semiconductor Laser Conf., Nara, Japan, 1998, Postdeadline Paper PD 5
8. HÖHNSDORF, F., KOCH, J., AGERT, C., and STOLZ, W.: 'Investigation of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (ThAs) and 1,1-dimethylhydrazine (UDMHy)', J. Cryst. Growth, 1998, 195, pp. 391-396
9. LEU, S., PROTZMANN, H., HÖHNSDORF, F., STOLZ, W., STEINKIRCHNER, F., and HUFGARD, E.: 'Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane', J. Cryst. Growth, 1998, 195, pp. 91-97
10. LEU, S., HÖHNSDORF, F., STOLZ, W., BECKER, R., SALZMANN, A., and GREILING, A.: 'C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs', J. Cryst. Growth, 1998, (195), pp. 98-104