Optical investigations of AlGaN on GaN epitaxial films

Applied Physics Letters

Volumn 74, Issue 17, 1999, Pages 2456-2458

  Steude, G ^a   Meyer, B K ^a   Goldner A ^b   Hoffmann, A ^b   Bertram, F ^c   Christen, J ^c   Amano, H ^d   Akasaki, I ^d  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

^d MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CATHODOLUMINESCENCE; CHARGE CARRIERS; EXCITONS; LIGHT ABSORPTION; LIGHT REFLECTION; LIGHT TRANSMISSION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; CARRIER LOCALIZATION; GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0032621617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123879     Document Type: Article

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