Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

Applied Physics Letters

Volumn 74, Issue 22, 1999, Pages 3287-3289

  Arlery, M ^a,c   Rouviere J L ^a   Widmann, F ^a   Daudin, B ^a   Feuillet, G ^a   Mariette, H ^b  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c IBM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

ALUMINUM NITRIDE; GALLIUM NITRIDE; STRANSKI-KRASTANOW GROWTH MODE TRANSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0345045558     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123321     Document Type: Article

References (21)

1. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).
2. B. G. Orr, D. Kessler, C. W. Snyder, and L. Sander, Europhys. Lett. 19, 33 (1992).
3. See, for example, J. M. Gerard, J. B. Genin, J. Lefebvre, J. Y. Marzin, D. Barrier, and J. M. Moison, NATO ASI Series No. 298 (Kluwer, Dorderecht, 1995). p. 35.
4. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 52, 11969 (1995).
5. C. Priester, I. Lefebvre, G. Allan, and M. Lannoo, Mater. Res. Soc. Symp. Proc. 317, 131 (1994).
6. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 955 (1995).
7. G. S. Solomon, J. A. Trezza, and J. R. Harris, Appl. Phys. Lett. 76, 952 (1996).
8. J. Tersoff, C. Teichert, and M. G. Magalli, Phys. Rev. Lett. 76, 1675 (1996).
9. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster, Appl. Phys. Lett. 71, 3868 (1997).
10. S Kret, C. Delamarre, J. Y. Laval, and A. Dubon, Philos. Mag. Lett. 77, 249 (1998).
11. B. Legrand, B. Grandidier, J. P. Nys, D. Stievenard, J. M. Gerard, and V. Thierry-Mieg, Appl. Phys. Lett. 73, 96 (1998).
12. N. Grandjean, J. Massies, and O. Tottereau, Phys. Rev. B 55, R10189 (1997).
13. C. Priester and M. Lannoo, Appl. Surf. Sci. 123, 658 (1998).
14. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J. L. Rouviere, Phys. Rev. B 56, R7069 (1997).
15. F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouviere, and N. Pelekanos, J. Appl. Phys. 83, 7618 (1998).
16. R. Bierwolf, M. Hohenstein, F. Phillipp, O. Brandt, G. E. Crook, and K. Ploog, Ultramicroscopy 49, 273 (1993).
17. M. Arlery, thesis of University. J. Fourier, Grenoble (April 1998).
18. P. H. Jouneau, A. Tardot, G. Feuillet, J. Cibert, and H. Mariette, J. Appl. Phys. 75, 7310 (1994).
19. P. A. Stadelmann, Ultramicroscopy 21, 131 (1987).
20. Y. M. Niquet, C. Priester, C. Gourgon, and H. Mariette, Phys. Rev. B 57, 14850 (1998).
21. J. J. Song and W. Shaw, in Group III Nitride Semiconductor Compounds: Physics and Applications, edited by B. Gil (Clarendon, Oxford, 1998), p. 182.