From atomistic to device level investigation of hybrid redox molecular/silicon field-effect memory devices

IEEE Transactions on Nanotechnology

Volumn 10, Issue 2, 2011, Pages 275-283

  Pro, Tiziana ^a   Buckley, Julien ^a   Barattin, Régis ^a   Calborean, Adrian ^a   Aiello, Venera ^a   Nicotra, Giuseppe ^b   Huang, Kai ^a   Gély, Marc ^a   Delapierre, Guillaume ^a   Jalaguier, Eric ^a   Duclairoir, Florence ^a   Chevalier, Nicolas ^a   Lombardo, Salvatore ^b   Maldivi, Pascale ^a   Ghibaudo, Gérard ^c   De Salvo, Barbara ^a   Deleonibus, Simon ^a  

^a CEA GRENOBLE   (France)

^b CNR   (Italy)

^c IMEP LAHC   (France)

Author keywords

Atomic force microscopy (AFM); atomic physics; capacitors; memories; molecular electronics; MOS devices

Indexed keywords

CHARGE STORAGE; COMPUTATIONAL DENSITY; ELECTRICAL DATA; ELECTROCHEMICAL MEASUREMENTS; FERROCENES; FIELD-EFFECT; MEMORIES; MEMORY DEVICE; MOLECULAR LAYER; ORGANIC LINKERS; PHYSICAL-CHEMICAL ANALYSIS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CAPACITORS; COMPUTATION THEORY; CYCLIC VOLTAMMETRY; DENSITY FUNCTIONAL THEORY; EQUIPMENT; IRON COMPOUNDS; MOLECULAR ELECTRONICS; MOLECULAR ORBITALS; MOS CAPACITORS; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79952681746     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2038612     Document Type: Article

References (18)

1. (2007, ed.). [Online]. Available: http://www.itrs.net/reports.html
2. K. Fukuda, Y. Shimizu, A. Kazumi, M. Kamoshida, and C. Hu, "Random telegraph noise in flash memories -model and technology scaling," in Proc. IEDM 2007, Washington, DC, pp. 169-172, Paper 7.4.
3. S.Gowda,G.Mathur,Q. Li, S. Surthi,Q. Zhao, J. S. Lindsey,D. F. Bocian, and V. Misra, "Modulation of drain current by redox-active molecules incorporated in Si MOSFETs," in IEDM Tech. Dig., 2007, pp. 707-710.
4. T. Pro, J. Buckley, M. Gely, K. Huang, G. Delapierre, G. Ghibaudo, F. Duclairoir, E. Jalaguier, B. De Salvo, and S. Deleonibus, "Electrical investigation of hybrid molecular / silicon memories with redox-active ferrocene molecules acting as storage media," in SNW'07 Tech. Dig., 2006, pp. 183-184.
5. 2 ," Appl. Phys. Lett., vol. 85, no. 10, pp. 1829-1831.
6. Z. Chen, B. Lee, S. Sarkar, S. Gowda, and V. Misraa, "A molecular memory device formed by HfO2 encapsulation of redox-active molecules," Appl. Phys. Lett., vol. 91, no. 17, pp. 173111-1-173111-3, 2007.
7. K. Huang, F. Duclairoir, T. Pro, J. Buckley, G. Marchand, E. Martinez, J. C. Marchon, B. De Salvo, G. Delapierre, and F. Vinet, "Ferrocene and porphyrin monolayers on Si(100) surfaces: Preparation and effect of linker length on electron transfer," Chem. Phys. Chem., vol. 10, no. 6, pp. 963-971, 2009.
8. S. Cristoloveanu, D. Muntenau, and M. S. T. Liu, "A review of the pseudo-MOS transistor in SOI wafers: Operation, parameter extraction, and applications," IEEE Trans. Electron Devices, vol. 47, no. 5, pp. 1018-1027, May 2000.
9. G. te Velde, F.M. Bickelhaupt, E. J. Baerends, C. F. Guerra, S. J. A. Van Gisbergen, J. G. Snijders, and T. Ziegler, "Chemistry with ADF," J. Comput. Chem., vol. 22, no. 9, pp. 931-967, 2001. (Pubitemid 32455733)
10. M. Cossi, M. F. Iozzi, A. G. Marrani, T. Lavecchia, P. Galloni, R. Zanoni, and F. Decker, "Measurement and DFT calculation of Fe(cp)2 redox potential molecular monolayers covalently bound to H-Si(100)," J. Phys. Chem. B, vol. 110, pp. 22961-1-22961-5, 2006.
11. Y. Fu, L. Liu, H. Z. Yu, Y. MinWang, and Q. X. Guo, "Quantumchemical predictions of absolute standard redox potentials of diverse organic molecules and free radicals in acetonitrile," JACS, vol. 127, no. 19, pp. 7227-7234, 2005. (Pubitemid 40676747)
12. S. Gowda, G. Mathur, and V. Misra, "Valence band tunneling model for charge transfer of redox-active molecules attached to n-and p-silicon substrates," Appl. Phys. Lett., vol. 90, no. 14, pp. 142113-1-142113-3, 2007.
13. G. Binnig and C. F. Quate, "Atomic force microscopy," Phys. Rev. Lett., vol. 56, no. 9, pp. 930-933, 1986.
14. N. D. Browning, E. M. James, K. Kishida, I. Arslan, J. P. Buban, J. A. Zaborac, S. J. Pennycook, Y. Xin, and G. Duscher, "Scanning transmission electron microscopy: An experimental tool for atomic scale interface science," Rev. Adv. Mater. Sci., vol. 1, pp. 1-26, 2000.
15. R. Zanoni, F. Cattaruzza, C. Coluzza, E. A. Dalchiele, F. Decker, G. Di Santo, A. Flamini, L. Funari, and A. G. Marrani, "An AFM, XPS and electrochemical study of molecular electroactive monolayers formed by wet chemistry functionalization of H-termined Si (100) with vinylferrocene," Surf. Sci., vol. 575, no. 3, pp. 260-272, 2005. (Pubitemid 40120822)
16. G. A. Mabbott, "Introduction to cyclic voltammetry," J. Chem. Educ., vol. 60, no. 9, pp. 697-701, 1983.
17. A. W. Bott, "A comparison of cyclic voltammetry and cyclic staircase voltammetry," Curr. Separations, vol. 16, no. 1, p. 23-26, 1997.
18. C. Leroux, J. Mitard, G. Ghibaudo, X. Garros, G. Reimbold, B. Guillaumor, and F. Martin, "Characterization and modeling of Hysteresis phenomena in high K dielectrics," in IEDM Tech. Dig., 2004, pp. 737-740. (Pubitemid 40928398)