Nonvolatile resistive memory devices based on hydrogenated amorphous carbon

European Solid-State Device Research Conference

Volumn , Issue , 2013, Pages 268-271

  Dellmann, L ^a   Sebastian, A ^a   Jonnalagadda, P ^a   Santini, C A ^a   Koelmans, W W ^a   Rossel, C ^a   Eleftheriou, E ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

amorphous carbon; graphitic memory; nonvolatile resistive memory

Indexed keywords

AMORPHOUS CARBON; SWITCHING;

ATOMIC DIMENSION; E-BEAM LITHOGRAPHY; ELECTRICAL TRANSPORT; HYDROGENATED AMORPHOUS CARBON; LOW-POWER MEMORY; RESISTANCE SWITCHING MECHANISMS; RESISTIVE MEMORY; UNIPOLAR RESISTANCE SWITCHING;

RANDOM ACCESS STORAGE;

EID: 84902135556     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2013.6818870     Document Type: Conference Paper

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