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Nanoscale

Volumn 4, Issue 20, 2012, Pages 6658-6663

A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion

(8) Qin, Shengjun a Zhang, Jinyu a Fu, Di a Xie, Dan a Wang, Yan a Qian, He a Liu, Litian a Yu, Zhiping a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FILMS; DIAMOND LIKE CARBON FILMS; ELECTRIC CIRCUIT BREAKERS; ELECTRIC FIELDS; SOLVENTS; SWITCHING; TEMPERATURE;

ELECTRIC FIELD-INDUCED TRANSITION; HIGH RESISTIVE STATE; LOW TEMPERATURES; RANDOM ACCESS MEMORY; RESISTIVE MEMORY; RESISTIVE SWITCHING; SWITCHING MECHANISM; SWITCHING PROCESS;

RANDOM ACCESS STORAGE;

EID: 84866978272 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr31180a Document Type: Article

Times cited : (25)

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