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Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

Material and process optimization of correlated electron random access memories

(4) Celinska, Jolanta a McWilliams, Christopher a Paz De Araujo, Carlos a,b Xue, Kan Hao b

a Symetrix Corporation (United States)

b University of Colorado at Colorado Springs (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CARBONYL LIGAND; CHARGE-TRANSFER INSULATORS; CHEMICAL SOLUTION DEPOSITION; COORDINATION NUMBER; CORRELATED ELECTRONS; DISPROPORTIONATION REACTIONS; DOMINANT MECHANISM; FILM STOICHIOMETRY; FINE TUNING; GENERAL CLASS; MEMORY MECHANISM; METAL-TO-INSULATOR TRANSITIONS; MODE OF OPERATIONS; NIO THIN FILM; PROCESS PARAMETERS; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; STABILIZING EFFECTS; SURFACE EXCESS; TRANSITION-METAL OXIDES; ULTRA LOW TEMPERATURES; VARIABLE RESISTANCE;

CARBONYLATION; CHARGE TRANSFER; COMPLEXATION; DEPOSITION; ELECTROFORMING; ELECTRON-ELECTRON INTERACTIONS; ELECTRONS; ION EXCHANGE; LIGANDS; METAL INSULATOR TRANSITION; METAL IONS; OPTIMIZATION; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR DOPING; STOICHIOMETRY; THIN FILMS; TRANSITION METAL COMPOUNDS; TRANSITION METALS; VAPOR DEPOSITION;

RANDOM ACCESS STORAGE;

EID: 79959525265 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3581197 Document Type: Conference Paper

Times cited : (19)

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