A molecular memory device formed by Hf O2 encapsulation of redox-active molecules

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Chen, Zhong ^a   Lee, Bongmook ^a   Sarkar, Smita ^a   Gowda, Srivardhan ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; DIELECTRIC FILMS; ENCAPSULATION; FABRICATION; HAFNIUM COMPOUNDS; REDOX REACTIONS; THIN FILMS;

FREQUENCY DISPERSIONS; MOLECULAR LAYERS; MOLECULAR MEMORY DEVICES; REDOX ACTIVE MOLECULES;

MIM DEVICES;

EID: 35549001754     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2800824     Document Type: Article

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