Scaling-down characteristics of nanoscale diamond-like carbon based resistive switching memories

Carbon

Volumn 75, Issue , 2014, Pages 255-261

  Xu, Jianlong ^a   Xie, Dan ^a   Feng, Tingting ^a   Zhang, Chenhui ^a   Zhang, Xiaowen ^a   Peng, Pinggang ^a   Fu, Di ^a   Qian, He ^a   Ren, Tian Ling ^a   Liu, Litian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON FILMS; ELECTRIC FIELDS; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

CONDUCTION MECHANISM; DIAMOND-LIKE CARBON; ELECTRIC FIELD INDUCED; FRENKEL-POOLE EMISSION; NON-VOLATILE MEMORY APPLICATION; RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY;

DIAMOND LIKE CARBON FILMS;

EID: 84900808862     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.03.061     Document Type: Article

References (26)

1. R. Waser, R. Dittmann, G. Staikov, and K. Szot Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges Adv Mater 21 2009 2632 2663
2. H.S. Philip Wong, H.Y. Lee, S.M. Yu, Y.S. Chen, Y. Wu, and P.S. Chen et al. Metal-oxide RRAM Proc IEEE 100 2012 1951 1970
3. 2 nanometallic resistance switch Nano Lett 13 2013 3213 3217
4. L. Chen, Y. Xu, Q.Q. Sun, P. Zhou, P.F. Wang, and S.J. Ding et al. Atomic-layer-deposited HfLaO-based resistive switching memories with superior performance IEEE Electron Device Lett 31 2010 1296 1298
5. Z. Jia, L.K. Wang, N.W. Zhang, T.L. Ren, and J.J. Liou Effects of anode materials on resistive characteristics of NiO thin films Appl Phys Lett 102 2013 042901
6. M.A. Khan, U.S. Bhansali, D.K. Cha, and H.N. Alshareef All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends Adv Funct Mater 23 2013 2145 2152
7. K. Antonowicz, J. Wieczore, and A. Jesmanow Switching phenomena in amorphous carbon Carbon 10 1972 81 86
8. Y. Naitoh, K. Yanagi, H. Suga, M. Horikawa, T. Tanaka, and H. Kataura et al. Non-volatile resistance switching using single-wall carbon nanotube encapsulating fullerene molecules Appl Phys Express 2 2009 035008
9. T.J. Echtermeyer, M.C. Lemme, M. Baus, B.N. Szafranek, A.K. Geim, and H. Kurz Nonvolatile switching in graphene field-effect devices IEEE Electron Device Lett 29 2008 952 954
10. H.Y. Jeong, J.Y. Kin, J.W. Kin, J.O. Hwang, J.E. Kin, and J.Y. Lee et al. Graphene oxide thin films for flexible nonvolatile memory applications Nano Lett 10 2010 4381 4386
11. F. Kreupl, R. Bruchhaus, P. Majewski, J.B. Philipp, R. Symanczyk, and T. Happ et al. Carbon based resistive memory Tech Dig - Int Electron Devices Meet 2008 1 4 8164-2284
12. A. Sinitskii, and J.M. Tour Lithographic graphitic memories ACS Nano 3 2009 2760 2766
13. Y. Chai, Y. Wu, T. Kuniharu, H.Y. Chen, S.M. Yu, and C.H. Chan Philip et al. Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon IEEE Trans Electron Devices 58 2011 3933 3939
14. Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, and Y. Inoue et al. High speed unipolar switching resistance RAM (RRAM) technology Tech Dig - Int Electron Devices Meet 2006 1 4 1-4244-0439-8
15. Y. Chai, Y. Wu, T. Kuniharu, H.Y. Chen, S.M. Yu, and C.H. Chan Philip et al. Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory Tech Dig - Int Electron Devices Meet 3 2010 9.3.1 9.3.4
16. A. Sebastian, A. Pauza, C. Rossel, R.M. Shelby, A.F. Rodriguez, and H. Pozidis et al. Diamond-based single-molecule magnetic resonance spectroscopy New J Phys 15 2013 013020
17. D. Fu, D. Xie, T.T. Feng, C.H. Zhang, J.B. Niu, and H. Qian et al. Unipolar resistive switching properties of diamond-like carbon-based RRAM devices IEEE Electron Device Lett 32 2011 803 805
18. P.G. Peng, D. Xie, Y. Yang, Y.Y. Zang, X.L. Gao, and C.J. Zhou et al. Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application J Appl Phys 111 2012 084501
19. A.C. Ferrari, and J. Robertson Interpretation of Raman spectra of disordered and amorphous carbon Phys Rev B 61 2000 14095
20. A.C. Ferrari, and J. Robertson Resonant Raman spectroscopy of disordered, amorphous, and diamond-like carbon Phys Rev B 64 2001 075414
21. J. Frenkel On pre-breakdown phenomena in insulators and electronic semiconductors Phys Rev 54 1938 647 648
22. J.G. Simmons Conduction in thin dielectric films J Phys D Appl Phys 4 1971 613 657
23. K. Gordon, and R. Wong Conductive filament of the programmed metal electrode and amorphous silicon antifuse Tech Dig - Int Electron Devices Meet 1993 27 30 0163-1918
24. Y. Tamura, and H. Shinriki Most promising metal-to-metal antifuse based 10-nm thick p-SiNx film for high density and high speed FPGA application Tech Dig - Int Electron Devices Meet 1994 285 288 0163-1918
25. 2-based voltage-programmable link applicable to on-chip programmable devices Semicond Sci Technol 15 2000 267 269
26. K. Takai, M. Oga, H. Sato, and T. Tnoki Structure and electronic properties of a nongraphitic disordered carbon system and its heat-treatment effects Phys Rev B 67 2003 214202