-
1
-
-
48649096104
-
Random telegraph noise in flash memories - Model and technology scaling
-
K. Fukuda, Y. Shimizu, A. Kazumi, M. Kamoshida, and C. Hu Random telegraph noise in flash memories - model and technology scaling IEDM Tech. Dig. 2007 169 172
-
(2007)
IEDM Tech. Dig.
, pp. 169-172
-
-
Fukuda, K.1
Shimizu, Y.2
Kazumi, A.3
Kamoshida, M.4
Hu, C.5
-
2
-
-
34548805944
-
Degradation of floating-gate memory reliability by few electron phenomena
-
G. Molas, D. Deleruyelle, B. De Salvo, G. Ghibaudo, M. Gély, L. Perniola, D. Lafond, and S. Deleonibus Degradation of floating-gate memory reliability by few electron phenomena Trans. Electron Devices 53 10 2006 2610 2619
-
(2006)
Trans. Electron Devices
, vol.53
, Issue.10
, pp. 2610-2619
-
-
Molas, G.1
Deleruyelle, D.2
De Salvo, B.3
Ghibaudo, G.4
Gély, M.5
Perniola, L.6
Lafond, D.7
Deleonibus, S.8
-
3
-
-
21644447068
-
Modulation of drain current by redox-active molecules incorporated in Si MOSFETs
-
S. Gowda, G. Mathur, Q. Li, S. Surthi, Q. Zhao, J.S. Lindsey, D.F. Bocian, and V. Misra Modulation of drain current by redox-active molecules incorporated in Si MOSFETs IEDM Tech. Dig. 2004 707 710
-
(2004)
IEDM Tech. Dig.
, pp. 707-710
-
-
Gowda, S.1
Mathur, G.2
Li, Q.3
Surthi, S.4
Zhao, Q.5
Lindsey, J.S.6
Bocian, D.F.7
Misra, V.8
-
4
-
-
35549001754
-
2 encapsulation of redox-active molecules
-
2 encapsulation of redox-active molecules Appl. Phys. Lett. 91 2007 173111
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 173111
-
-
Chen, Z.1
-
5
-
-
62449266384
-
Investigation of hybrid molecular/silicon memories with redox-active molecules acting as storage media
-
T. Pro Investigation of hybrid molecular/silicon memories with redox-active molecules acting as storage media IEEE Trans. Nanotechnol. 8 2009 204 213
-
(2009)
IEEE Trans. Nanotechnol.
, vol.8
, pp. 204-213
-
-
Pro, T.1
-
6
-
-
79960924676
-
From atomistic to device level investigation of hybrid redox molecular/silicon field effect memory device
-
T. Pro From atomistic to device level investigation of hybrid redox molecular/silicon field effect memory device IEEE T. Nanotechnol. 99 2010
-
(2010)
IEEE T. Nanotechnol.
, vol.99
-
-
Pro, T.1
-
7
-
-
17644445363
-
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
-
B. De Salvo How far will silicon nanocrystals push the scaling limits of NVMs technologies? IEDM Tech. Dig. 2003
-
(2003)
IEDM Tech. Dig.
-
-
De Salvo, B.1
-
8
-
-
0348238141
-
Properties of electronics traps at silicon/1-octadecene interfaces
-
S. Kar Properties of electronics traps at silicon/1-octadecene interfaces Appl. Phys. Lett. 78 9 2001 1288 1290
-
(2001)
Appl. Phys. Lett.
, vol.78
, Issue.9
, pp. 1288-1290
-
-
Kar, S.1
-
9
-
-
64749095964
-
Ferrocene and porphyrin monolayers on Si(100) surfaces: Preparation and effect of linker length on electron transfer
-
K. Huang Ferrocene and porphyrin monolayers on Si(100) surfaces: preparation and effect of linker length on electron transfer Chem. Phys. Chem. 10 6 2009 963 971
-
(2009)
Chem. Phys. Chem.
, vol.10
, Issue.6
, pp. 963-971
-
-
Huang, K.1
-
11
-
-
4944265079
-
2
-
2 Appl. Phys. Lett. 85 10 2004 1829 1831
-
(2004)
Appl. Phys. Lett.
, vol.85
, Issue.10
, pp. 1829-1831
-
-
Li, Q.1
Surthi, S.2
Mathur, G.3
Gowda, S.4
Zhao, Q.5
Sorenson, T.A.6
Tenent, R.C.7
Muthukumaran, K.8
Lindsey, J.S.9
Misra, V.10
-
13
-
-
58049116108
-
Study of ferrocene/silicon hybrid memories: Influence of the chemical linkers and device thermal stability
-
T. Pro Study of ferrocene/silicon hybrid memories: influence of the chemical linkers and device thermal stability Proc. ESSDERC 2008
-
(2008)
Proc. ESSDERC
-
-
Pro, T.1
-
14
-
-
79960916756
-
-
http://www.zettacore.com/overview.html
-
-
-
-
15
-
-
33846102035
-
ZettaRAM: A power-Scalable DRAM alternative through charge-volate decoupling
-
R.K. Venkatesan ZettaRAM: a power-Scalable DRAM alternative through charge-volate decoupling IEEE Trans. Comput. 56 2 2007 47
-
(2007)
IEEE Trans. Comput.
, vol.56
, Issue.2
, pp. 47
-
-
Venkatesan, R.K.1
-
16
-
-
55549101230
-
Polymer electronic memories: Materials, devices and mechanisms
-
Q.-D. Ling, D.-J. Liaw, C. Zhu, DS.-H. Chan, E.-T. Kang, and K.-G. Neoh Polymer electronic memories: materials, devices and mechanisms Prog. Polym. Sci. 33 2008 917 978
-
(2008)
Prog. Polym. Sci.
, vol.33
, pp. 917-978
-
-
Ling, Q.-D.1
Liaw, D.-J.2
Zhu, C.3
Chan, D.S.-H.4
Kang, E.-T.5
Neoh, K.-G.6
-
17
-
-
46049086038
-
Thermally robust multi-layer non-volatile polymer resistive memory
-
Byeong-Ok Cho, Takahiro Yasue, Hongsik Yoon, Moon-Sook Lee, In-Seok Yeo, U.-In Chung, Joo-Tae Moon, and Byung-Il Ryu Thermally robust multi-layer non-volatile polymer resistive memory Techn. Dig. IEDM 2006
-
(2006)
Techn. Dig. IEDM
-
-
Cho, B.-O.1
Yasue, T.2
Yoon, H.3
Lee, M.-S.4
Yeo, I.-S.5
Chung, U.-I.6
Moon, J.-T.7
Ryu, B.-I.8
-
18
-
-
50349102090
-
Stackable resistive memory device using photo cross-linkable copolymer
-
Wei Lek Kwan, Ricky J. Tseng, Wei Wu, Qibing Pei, and Yang Yang Stackable resistive memory device using photo cross-linkable copolymer Techn. Dig. IEDM 2007
-
(2007)
Techn. Dig. IEDM
-
-
Kwan, W.L.1
Tseng, R.J.2
Wu, W.3
Pei, Q.4
Yang, Y.5
-
19
-
-
0037392525
-
Nanoscale molecular-switch crossbar circuits
-
Y. Chen, G.-Y. Jung, D.A.A. Ohlberg, X. Li, D.R. Stewart, J.O. Jeppesen, K.A. Nielsen, J.F. Stoddart, and R.S. Williams Nanoscale molecular-switch crossbar circuits Nanotechnology 14 2003 462 468
-
(2003)
Nanotechnology
, vol.14
, pp. 462-468
-
-
Chen, Y.1
Jung, G.-Y.2
Ohlberg, D.A.A.3
Li, X.4
Stewart, D.R.5
Jeppesen, J.O.6
Nielsen, K.A.7
Stoddart, J.F.8
Williams, R.S.9
-
20
-
-
33846491447
-
11 bits per square centimetre
-
DOI 10.1038/nature05462, PII NATURE05462
-
J.E. Green, J.W. Choi, A. Boukai, Y. Bunimovich, E. Johnston-Halperin, E. DeIonno, Y. Luo, B.A. Sheriff, K. Xu, Y.S. Shin, H.-R. Tseng, J.F. Stoddart, and J.R. Heath A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre Nature Letters 445 2007 414 417 (Pubitemid 46160906)
-
(2007)
Nature
, vol.445
, Issue.7126
, pp. 414-417
-
-
Green, J.E.1
Wook Choi, J.2
Boukai, A.3
Bunimovich, Y.4
Johnston-Halperin, E.5
Deionno, E.6
Luo, Y.7
Sheriff, B.A.8
Xu, K.9
Shik Shin, Y.10
Tseng, H.-R.11
Stoddart, J.F.12
Heath, J.R.13
-
21
-
-
43049126833
-
The missing memristor found
-
DOI 10.1038/nature06932, PII NATURE06932
-
D.B. Strukov, G.S. Snider, D.R. Stewart, and R.S. Williams The missing memristor found Nature 453 2008 80 83 (Pubitemid 351630336)
-
(2008)
Nature
, vol.453
, Issue.7191
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
22
-
-
57849122145
-
How we found the missing memristor
-
R.S. Williams How we found the missing memristor IEEE Spectrum 2008 http://spectrum.ieee.org/semiconductors/processors/how-we-found-the-missing- memristor
-
(2008)
IEEE Spectrum
-
-
Williams, R.S.1
-
23
-
-
31044431595
-
Study of the room temperature molecular memory observed from a nanowell device
-
DOI 10.1116/1.1931687
-
N. Gergel, N. Majumdar, K. Keyvanfar, N. Swami, L.R. Harriott, J.C. Bean, Gyana Pattanaik, Giovanni Zangari, Y. Yao, and J.M. Tour Study of the room temperature molecular memory observed from a nanowell device J. Vac. Sci. Technol. A 23 2005 880 885 (Pubitemid 43119221)
-
(2005)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.23
, Issue.4
, pp. 880-885
-
-
Gergel, N.1
Majumdar, N.2
Keyvanfar, K.3
Swami, N.4
Harriott, L.R.5
Bean, J.C.6
Pattanaik, G.7
Zangari, G.8
Yao, Y.9
Tour, J.M.10
-
24
-
-
0034617249
-
Carbon nanotube-based nonvolatile random access memory for molecular computing
-
DOI 10.1126/science.289.5476.94
-
T. Rueckes, K. Kim, E. Joselevich, G.Y. Tseng, C.-L. heung, and C.M. Lieber Carbon nanotube-based nonvolatile random access memory for molecular computing Science 289 2000 94 97 (Pubitemid 30463297)
-
(2000)
Science
, vol.289
, Issue.5476
, pp. 94-97
-
-
Rueckes, T.1
Kim, K.2
Joselevich, E.3
Tseng, G.Y.4
Cheung, C.-L.5
Lieber, C.M.6
-
25
-
-
79960930238
-
-
http://www.lockheedmartin.com/news/press-releases/2009/1118-ss-nanotubes. html
-
-
-
-
26
-
-
79960911958
-
-
http://www.nantero.com
-
-
-
-
27
-
-
64449083038
-
Mechanically controlled binary conductance switching of a single-molecule junction
-
S.Y. Quek, M. Kamenetska, M.L. Steigerwald, H.J. Choi, S.G. Louie1, M.S. Hybertsen, J.B. Neaton1, and L. Venkataraman Mechanically controlled binary conductance switching of a single-molecule junction Nat. Nanotechnol. 4 2009 230 234
-
(2009)
Nat. Nanotechnol.
, vol.4
, pp. 230-234
-
-
Quek, S.Y.1
Kamenetska, M.2
Steigerwald, M.L.3
Choi, H.J.4
Louie, S.G.5
Hybertsen, M.S.6
Neaton, J.B.7
Venkataraman, L.8
-
28
-
-
77951739459
-
High on off conductance switching ratio in optically-driven self-assembled conjugated molecular Systems
-
K. Smaali, S. Lenfant, S. Karpe, M. Ocafrain, P. Blanchard, D. Deresmes, S. Godey, A. Rochefort, J. Roncali, and D. Vuillaume High on-off conductance switching ratio in optically-driven self-assembled conjugated molecular Systems ACS NANO 4 4 2010 2411 2421
-
(2010)
ACS NANO
, vol.4
, Issue.4
, pp. 2411-2421
-
-
Smaali, K.1
Lenfant, S.2
Karpe, S.3
Ocafrain, M.4
Blanchard, P.5
Deresmes, D.6
Godey, S.7
Rochefort, A.8
Roncali, J.9
Vuillaume, D.10
-
29
-
-
34547346804
-
Nonvolatile memory elements based on organic materials
-
DOI 10.1002/adma.200602564
-
L.D. Bozano, and J.C. Scott Nonvolatile memory elements based on organic materials Adv. Mater. 19 2007 1452 1463 (Pubitemid 47153147)
-
(2007)
Advanced Materials
, vol.19
, Issue.11
, pp. 1452-1463
-
-
Scott, J.C.1
Bozano, L.D.2
-
30
-
-
12844249479
-
Metal/organic/metal bistable memory devices
-
DOI 10.1063/1.1829166
-
D. Tondelier, K. Lmimouni, D. Vuillaume, C. Fery, and G. Haas Metal/organic/metal bistable memory devices Appl. Phys. Lett. 85 23 2004 5763 5765 (Pubitemid 40162586)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.23
, pp. 5763-5765
-
-
Tondelier, D.1
Lmimouni, K.2
Vuillaume, D.3
Fery, C.4
Haas, G.5
-
34
-
-
65249122724
-
Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiO tunneling barrier
-
J.-G. Park, W.-S. Nam, S.-H. Seo, Y.-G. Kim, Y.-H. Oh, G.-S. Lee, and U.-G. Paik Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiO tunneling barrier Nano. Lett. 9 4 2009
-
(2009)
Nano. Lett.
, vol.9
, Issue.4
-
-
Park, J.-G.1
Nam, W.-S.2
Seo, S.-H.3
Kim, Y.-G.4
Oh, Y.-H.5
Lee, G.-S.6
Paik, U.-G.7
|