Sub-100fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

Nanotechnology

Volumn 23, Issue 21, 2012, Pages

  Pickett, Matthew D ^a   Stanley Williams, R ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMICAL MODEL; ENERGY SCALING; HYBRID CMOS; INSULATOR TO METAL; NANO SCALE; NANO-DEVICES; NANOELECTRONIC CIRCUITS; NEGATIVE DIFFERENTIAL RESISTANCES; SWITCHING ENERGY; SWITCHING SPEED; SWITCHING TIME; THERMALLY DRIVEN; THRESHOLD SWITCHING; TIME BEHAVIOR;

NIOBIUM OXIDE;

SWITCHING;

NANOMATERIAL; NIOBIUM; NIOBIUM PENTOXIDE; OXIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; HEAT; INSTRUMENTATION; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SIGNAL PROCESSING; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; HOT TEMPERATURE; NANOSTRUCTURES; NANOTECHNOLOGY; NIOBIUM; OXIDES; PARTICLE SIZE; SEMICONDUCTORS; SIGNAL PROCESSING, COMPUTER-ASSISTED;

EID: 84860744210     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/21/215202     Document Type: Article

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