Spin-transfer torque RAM technology: Review and prospect

Microelectronics Reliability

Volumn 52, Issue 4, 2012, Pages 613-627

  Kawahara, T ^a   Ito, K ^a   Takemura, R ^a   Ohno, H ^b  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT LEVELS; DEVICE TECHNOLOGIES; MAGNETIC TUNNEL JUNCTION; MEMORY APPLICATIONS; MEMORY CELL; MULTI-BITS; NON-VOLATILE RAMS; POTENTIAL VALUES; READ OPERATION; SPIN TRANSFER TORQUE; VOLTAGE LIMITATION;

MAGNETIC DEVICES; SEMICONDUCTOR STORAGE; TECHNOLOGY;

RANDOM ACCESS STORAGE;

EID: 84857793796     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.09.028     Document Type: Review

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