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Advanced Materials

Volumn 24, Issue 19, 2012, Pages 2614-2619

Graphene/metal contacts: Bistable states and novel memory devices

(6) Wang, Xiaomu a Xie, Weiguang a,c Du, Jun a Wang, Chengliang a Zhao, Ni a Xu, Jian Bin a,b

a CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

b NANJING UNIVERSITY (China)

c JINAN UNIVERSITY (China)

Author keywords

contact; graphene; memory device

Indexed keywords

BI-STABLE STATE; CONTACT CHARACTERISTICS; METAL ELECTRODES; POTENTIAL DISTRIBUTIONS; SPACE CHARGE REGIONS;

CONTACTS (FLUID MECHANICS); DATA STORAGE EQUIPMENT; FIELD EFFECT TRANSISTORS;

GRAPHENE;

GRAPHITE; METAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRODE; SEMICONDUCTOR;

ELECTRODES; GRAPHITE; METALS; SEMICONDUCTORS; SILICON DIOXIDE;

EID: 84861029426 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201104574 Document Type: Article

Times cited : (36)

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