Record low-power organic RRAM with Sub-20-nA reset current

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 223-225

  Bai, Wenliang ^a   Huang, Ru ^a   Cai, Yimao ^a   Tang, Yu ^a   Zhang, Xing ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Double layer; low power; organic resistive random access memory (RRAM); parylene C; single layer

Indexed keywords

DOUBLE LAYERS; LOW POWER; PARYLENE C; RESISTIVE RANDOM ACCESS MEMORY; SINGLE LAYER;

ELECTRON DEVICES;

ELECTRONICS ENGINEERING;

EID: 84873057368     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2231047     Document Type: Article

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