Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3933-3939

  Chai, Yang ^a   Wu, Yi ^a   Takei, Kuniharu ^b   Chen, Hong Yu ^a   Yu, Shimeng ^a   Chan, Philip C H ^c,d   Javey, Ali ^b   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^d HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Amorphous carbon (a C); carbon nanotube (CNT); complementary resistive switching; nonvolatile memory; resistive random access memory (RRAM); resistive switching memory

Indexed keywords

AMORPHOUS CARBON (A-C); NON-VOLATILE MEMORIES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES;

AMORPHOUS CARBON; CARBON NANOTUBES; NONVOLATILE STORAGE; SEMICONDUCTOR STORAGE; SWITCHING; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 80054950125     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2164615     Document Type: Article

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