Universal electric-field-driven resistive transition in narrow-gap Mott insulators

Advanced Materials

Volumn 25, Issue 23, 2013, Pages 3222-3226

  Stoliar, Pablo ^a,b   Cario, Laurent ^c   Janod, Etiene ^c   Corraze, Benoit ^c   Guillot Deudon, Catherine ^c   Salmon Bourmand, Sabrina ^c   Guiot, Vincent ^c   Tranchant, Julien ^c   Rozenberg, Marcelo ^a  

^a UNIVERSITÉ PARIS SUD   (France)

^b UNIVERSIDAD NACIONAL DE SAN MARTÍN   (Argentina)

^c UNIVERSITÉ DE NANTES   (France)

Author keywords

AM4 Q8; Mott insulators; NiS2; resistive switching; strongly correlated systems; V 2O3

Indexed keywords

MOTT INSULATORS; NIS2; NON-TRIVIAL; RESISTIVE SWITCHING; RESISTIVE TRANSITION; STRONGLY CORRELATED SYSTEMS;

MATERIALS SCIENCE; MECHANICAL PROPERTIES;

SWITCHING SYSTEMS;

EID: 84879108362     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201301113     Document Type: Article

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