Avalanche breakdown in GaTa4Se8-xTex narrow-gap Mott insulators

Nature Communications

Volumn 4, Issue , 2013, Pages

  Guiot, V ^a   Cario, L ^a   Janod, E ^a   Corraze, B ^a   Ta Phuoc, V ^b   Rozenberg, M ^c   Stoliar, P ^c   Cren, T ^d   Roditchev, D ^d  

^a UNIVERSITÉ DE NANTES   (France)

^b Faculty of Sciences and Techniques   (France)

^c UNIVERSITÉ PARIS SUD   (France)

^d INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; MOLYBDENUM; NIOBIUM; SELENIUM; TANTALUM; TELLURIUM; TRANSCRIPTION FACTOR GATA 4; VANADIUM;

AVALANCHE; ELECTRICAL METHOD; INSULATION; THEORETICAL STUDY;

ARTICLE; CONDUCTANCE; CRYSTAL STRUCTURE; ELECTRIC FIELD; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 84877726368     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2735     Document Type: Article

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