A scalable neuristor built with Mott memristors

Nature Materials

Volumn 12, Issue 2, 2013, Pages 114-117

  Pickett, Matthew D ^a   Medeiros Ribeiro, Gilberto ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MEMRISTORS; MOSFET DEVICES; RESISTORS; SILICON;

ACTION POTENTIALS; COMPUTATIONAL CAPABILITY; ELECTRONIC DEVICE; HIGH-DENSITY INTEGRATION; HODGKIN-HUXLEY MODELS; IMPROVING EFFICIENCY; INSULATING-TO-CONDUCTING PHASE TRANSITION; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NANO SCALE; NEGATIVE DIFFERENTIAL RESISTANCES; NEURAL FUNCTIONS; PHYSICAL SYSTEMS; SIGNAL GAIN; SILICON TRANSISTORS; SOFTWARE SIMULATION;

PASSIVE FILTERS;

ACTION POTENTIAL; ARTICLE; ARTIFICIAL NEURAL NETWORK; BIOLOGICAL MODEL; IMPEDANCE; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; NERVE FIBER; PHYSIOLOGY; SEMICONDUCTOR; SIGNAL TRANSDUCTION;

ACTION POTENTIALS; AXONS; ELECTRIC IMPEDANCE; MATERIALS TESTING; MODELS, BIOLOGICAL; NANOTECHNOLOGY; NEURAL NETWORKS (COMPUTER); SEMICONDUCTORS; SIGNAL TRANSDUCTION;

MLCS; MLOWN;

EID: 84872962355     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3510     Document Type: Article

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