Electrical characterization of unipolar organic resistive memory devices scaled down by a direct metal-transfer method

Advanced Materials

Volumn 23, Issue 18, 2011, Pages 2104-2107

  Kim, Jin Ju ^a   Cho, Byungjin ^a   Kim, Ki Seok ^a   Lee, Takhee ^a   Jung, Gun Young ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

metal transfer patterning; nonvolatile memory; organic electronics; unipolar memory

Indexed keywords

CELL SIZE; CROSSBAR ARRAYS; ELECTRICAL CHARACTERIZATION; HIGHLY INTEGRATED; MEMORY DEVICE; MEMORY PERFORMANCE; NANO-METER SCALE; NON-AQUEOUS; NON-VOLATILE MEMORIES; ON/OFF RATIO; ORGANIC ELECTRONICS; ORGANIC MEMORY DEVICES; TRANSFER METHOD; UNIPOLAR MEMORY;

METALS;

METAL; ORGANIC COMPOUND;

ARTICLE; CHEMISTRY; ELECTRICAL EQUIPMENT; ELECTRICITY; IMPEDANCE;

ELECTRIC IMPEDANCE; ELECTRICAL EQUIPMENT AND SUPPLIES; ELECTRICITY; METALS; ORGANIC CHEMICALS;

EID: 79955595847     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201100081     Document Type: Article

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