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Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions

(5) Ruzmetov, Dmitry a Gopalakrishnan, Gokul a Deng, Jiangdong b Narayanamurti, Venkatesh a Ramanathan, Shriram a

a HARVARD UNIVERSITY (United States)

b HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING SUBSTRATES; CONDUCTING-TIP ATOMIC FORCE MICROSCOPES; CRITICAL FIELDS; CURRENT PERPENDICULAR TO PLANE; CURRENT-VOLTAGE RELATIONSHIP; DIELECTRIC CONSTANTS; E-BEAM LITHOGRAPHY; ELECTRON TRANSPORT MEASUREMENTS; IV CHARACTERISTICS; NANO SCALE; OXIDE ELECTRONICS; QUANTITATIVE ANALYSIS; SIZE SCALE; SPUTTERED THIN FILMS; VANADIUM OXIDES;

GOLD; METAL INSULATOR BOUNDARIES; OXIDES; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS;

METAL INSULATOR TRANSITION;

EID: 70449435711 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3245338 Document Type: Article

Times cited : (107)

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