Carbon-based resistive memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Kreupl, Franz ^a   Bruchhaus, Rainer ^b   Majewski, Petra ^a   Philipp, Jan B ^a   Symanczyk, Ralf ^a   Happ, Thomas ^a   Arndt, Christian ^a   Vogt, Mirko ^a   Zimmermann, Roy ^a   Buerke, Axel ^a   Graham, Andrew P ^a   Kund, Michael ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON-BASED; CONDUCTIVE CARBONS; GRAPHENE; HIGH DENSITIES; HIGH-SPEED SWITCHING; MULTI-LEVEL PROGRAMMING; NON-VOLATILE MEMORIES;

DATA STORAGE EQUIPMENT; ELECTRON DEVICES;

CARBON NANOTUBES;

EID: 64549103733     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796740     Document Type: Conference Paper

References (15)

1. K. Takai, M. Oga, H. Sato, T. Enoki, Y. Ohki, A. Taomoto, K. Suenaga, S. Iijima, Structure and electronic properties of a nongraphitic disordered carbon system and its heat-treatment effects, Physical Review B, vol. 67, Issue 21, p. 214202 (2003).
2. Anming Hu, Interaction of Nanosecond and Femtosecond Laser Pulses with Carbon: Deposition of Carbon Films having Novel Compositions, Ph. D. thesis, University of Waterloo (2008).
3. J.Y. Huang, S. Chen, Z.F. Ren, G. Chen, M.S. Dresselhaus, Real-Time Observation of Tubule Formation from Amorphous Carbon Nanowires under High-Bias Joule Heating, Nano Letters 6(8), p.1699 (2006).
4. S. Liu, D. Lamp, S. Gangopadhyay, G. Sreenivas, S. S. Ang, and H. A. Naseem, A New Metal-to-Metal Antifuse with Amorphous Carbon, IEEE Electron Device Letters, Vol. 19, 9, p.317 (1998).
5. B. R. Goldsmith, J.G. Coroneus, V.R. Khalap, A.A. Kane, G.A. Weiss, P.G. Collins, Conductance-Controlled Point Functionalization of Single- Walled Carbon Nanotubes, Science 315, p. 77 (2007).
6. T. J. Echtermeyer, M. C. Lemme, M. Baus, B.N. Szafranek, A.K. Geim, H. Kurz, Nonvolatile Switching in Graphene Field-Effect Devices, Electron Device Letters, Vol. 29,8, pp.952-954 (2008).
7. E. Pop, The role of electrical and thermal contact resistance for Joule breakdown of single-wall carbon nanotubes, Nanotechnology 19 p. 295202 (2008).
8. O. Suekane, A. Nagataki, Y. Nakayama, Current-induced curing of defective carbon nanotubes, Appl. Phys. Lett. 89, 183110 (2006).
9. C.-L. Zhang, H.-S. Shen, Self-healing in defective carbon nanotubes: a molecular dynamics study, J. Phys.: Condens. Matter 19 p. 386212 (2007).
10. Ch. Marquardt, S. Dehm, A. Vijayaraghavan, S. Blatt, F. Hennrich, R. Krupke, Reversible Metal-Insulator Transitions in Metallic Single-Walled Carbon Nanotubes, Nano Letters ASAP, 10.1021/nl801288d (2008).
11. G. Aichmayr, A. Avellan, G.S. Duesberg, F. Kreupl, S. Kudelka, M. Liebau, A. Orth, A. Sänger, J. Schumann, O. Storbeck, Carbon-high-k Trench Capacitor for the 40nm DRAM Generation, IEEE Symposium on VLSI Technology, pp. 186-187 (2007).
12. J. Robertson, Electronic and atomic structure of diamond-like carbon, Semicon. Sci. Technol. 18, p.12 (2003).
13. A. Evtukh, V. Litovchenko, M. Semenenko, O. Yilmazoglu, K. Mutamba, H. L. Hartnagel, D. Pavlidis, Formation of conducting nanochannels in diamond-like carbon films, Semicond. Sci. Technol. 21, p.1326 (2006).
14. S. Bhattacharyya, S. J. Henley, E. Mendoza, L. Gomez-Rojas, J. Allam, S. R. P. Silva, Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures, Nature Materials 5, 19 - 22 (2006).
15. E. G. Gerstner and D. R. McKenzie, Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films, J. Appl. Phys. Vol. 84, 10, p. 5467 (1998).