Reliability characterization issues for nanoscale flash memories: A case study on 45-nm NOR devices

IEEE Transactions on Device and Materials Reliability

Volumn 13, Issue 2, 2013, Pages 362-369

  Miccoli, Carmine ^a   Compagnoni, Christian Monzio ^a   Chiavarone, Luca ^b   Beltrami, Silvia ^b   Lacaita, Andrea L ^a,c   Spinelli, Alessandro S ^a,c   Visconti, Angelo ^b  

^a POLITECNICO DI MILANO   (Italy)

^b MICRON TECHNOLOGY INC   (United States)

^c CNR   (Italy)

Author keywords

Flash memories; program erase cycling; semiconductor device modeling; semiconductor device reliability

Indexed keywords

DAMAGE RECOVERY; EXPERIMENTAL INVESTIGATIONS; EXPERIMENTAL TEST; PROGRAM/ERASE; RELIABILITY CHARACTERIZATION; RELIABILITY CONSTRAINTS; SEMICONDUCTOR DEVICE RELIABILITY; SPURIOUS EFFECTS;

ACTIVATION ENERGY; FLASH MEMORY; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MODELS;

RELIABILITY;

EID: 84879358992     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2013.2252619     Document Type: Article

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