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Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

A non-filamentary model for unipolar switching transition metal oxide resistance random access memories

(4) Xue, Kan Hao a,b Paz De Araujo, Carlos A a,b Celinska, Jolanta b McWilliams, Christopher b

a University of Colorado at Colorado Springs (United States)

b Symetrix Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC REGIONS; CORRELATED ELECTRONS; CURRENT VOLTAGE; ELECTRON CORRELATION EFFECT; EXPERIMENTAL EVIDENCE; HUBBARD; MESOSCOPICS; MOTT TRANSITIONS; RANDOM ACCESS MEMORIES; RESISTANCE RANDOM ACCESS MEMORY; STRONG ELECTRON CORRELATIONS; TRANSITION-METAL OXIDES; TRANSPORT EQUATION; TUNNELING CURRENT; UNIPOLAR SWITCHING; WORKING MECHANISMS;

CORRELATION DETECTORS; ELECTRON CORRELATIONS; ELECTRON DENSITY MEASUREMENT; ELECTRONS; NONVOLATILE STORAGE; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79959533149 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3581193 Document Type: Conference Paper

Times cited : (23)

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