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Volumn 29, Issue 1, 2011, Pages

Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CRYSTAL ATOMIC STRUCTURE; ELECTROCHEMISTRY; ELECTROFORMING; ELECTROMETALLURGY; FILM PREPARATION; NANOIMPRINT LITHOGRAPHY; OXIDE MINERALS; SWITCHING; TITANIUM DIOXIDE;

EID: 79551645117     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3536487     Document Type: Conference Paper
Times cited : (18)

References (26)
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    • Strukov, D.B.1    Likharev, K.K.2
  • 20
    • 69949180728 scopus 로고
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    • Suntola, T.1
  • 21
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    • DOI 10.1002/anie.200301652
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  • 22
    • 21744444606 scopus 로고    scopus 로고
    • Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
    • DOI 10.1063/1.1940727, 121301
    • R. L. Puurunen, J. Appl. Phys. 0021-8979 97, 121301 (2005). 10.1063/1.1940727 (Pubitemid 40940570)
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    • Puurunen, R.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.