Structural defects in GaN-based materials and their relation to GaN-based laser diodes

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Volumn , Issue , 2013, Pages 207-245

  Tomiya, Shigetaka ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEFECTS; DIODES; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

DEVICE RELIABILITY; GAN BASED LASER DIODES; GAN LASER DIODES; HIGH-EFFICIENCY; HIGHLY RELIABLE; III-V MATERIALS; STRUCTURAL DEFECT; TRANSMISSION ELECTRON;

GALLIUM NITRIDE;

EID: 84884216565     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4614-4337-7_7     Document Type: Chapter

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