Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Marona, L ^a   Wisniewski P ^a   Leszczynski M ^a,b   Grzegory, I ^a,b   Suski, T ^a   Porowski, S ^a   Czernecki, R ^b   Czerwinski, A ^c   Pluska, M ^c   Ratajczak, J ^c   Perlin, P ^a,b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Degradation; Degradation rate; GaN; InGaN; Laser diodes; Light emission; Light emitters; Quantum efficiency; Quantum well; Reliability

Indexed keywords

CRYSTALLOGRAPHY; CUBIC BORON NITRIDE; DEGRADATION; DIODES; DISLOCATIONS (CRYSTALS); GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LASERS; LEAKAGE CURRENTS; NITRIDES; OPTICS; PIGMENTS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SULFATE MINERALS;

BULK GAN; CATHODOLUMINESCENCE (CL) IMAGING; CHARACTERISTIC TEMPERATURES; EVOLUTION (CO); LASER DIODE (LD); LOW DISLOCATION DENSITY; NITRIDE MATERIALS; NONRADIATIVE (NR) RECOMBINATION; OPTICAL INSTRUMENTATION; QUANTUM WELLS; THERMAL STABILITY;

QUANTUM WELL LASERS;

EID: 42149154801     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.762220     Document Type: Conference Paper

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