Dislocation related issues in the degradation of GaN-based laser diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 6, 2004, Pages 1277-1286

  Tomiya, Shigetaka ^a   Hino, Tomonori ^a   Goto, Shu ^a   Takeya, Motonobu ^a   Ikeda, Masao ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Cathodohiminescence microscopy; Cross slip; Degradation; Diffusion; Dislocation; Dislocation climb; Dislocation glide; Epitaxial lateral overgrowth (ELO); GaN; Laser diode; Magnesium; Recombination enhancement effect; Reliability; Transmission electron microscopy

Indexed keywords

CATHODOLUMINESCENCE; DEGRADATION; DIFFUSION; DISLOCATIONS (CRYSTALS); ENERGY UTILIZATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; RELIABILITY; TRANSMISSION ELECTRON MICROSCOPY;

CATHODOLUMINESCENCE MICROSCOPY; CROSS SLIP; DISLOCATION CLIMB; EPITAXIAL LATERAL OVERGROWTH (ELO); RECOMBINATION-ENHANCEMENT EFFECTS;

SEMICONDUCTOR LASERS;

EID: 13844254127     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.837735     Document Type: Article

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