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Volumn 99, Issue 9, 2011, Pages

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

(9) Meneghini, M a De Santi, C a Trivellin, N a Orita, K b Takigawa, S b Tanaka, T b Ueda, D b Meneghesso, G a Zanoni, E a

a UNIVERSITY OF PADOVA (Italy)

b PANASONIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

2D SIMULATIONS; DEEP LEVEL; DEGRADATION PROCESS; LASER DEGRADATION; OPTICAL MEASUREMENT; QUANTUM WELL; THRESHOLD CURRENTS;

DEGRADATION; ELECTRON MOBILITY; GALLIUM COMPOUNDS; OPTICAL DATA PROCESSING;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 80052524468 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3626280 Document Type: Article

Times cited : (59)

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