Relation between interface morphology and recombination-enhanced defect reaction phenomena in II-VI light emitting devices

Applied Surface Science

Volumn 159, Issue , 2000, Pages 243-249

  Tomiya, S ^a   Okuyama, H ^a   Ishibashi, A ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL DEFECTS; ELECTROLUMINESCENCE; ELECTROOPTICAL DEVICES; INTERFACES (MATERIALS); MORPHOLOGY; NUCLEATION; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DARK-AREA DEFECTS (DAD); RECOMBINANT-ENHANCED DEFECT REACTIONS (REDR);

LIGHT EMITTING DIODES;

EID: 0034205945     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00061-1     Document Type: Article

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